| HS Code | 737423 |
| Product | Toluene, Semiconductor Grade, 99% min, Thermo Scientific (Alfa Aesar) |
| Chemicalformula | C7H8 |
| Linearformula | C6H5CH3 |
| Casnumber | 108-88-3 |
| Ecnumber | 203-625-9 |
| Mdlnumber | MFCD00000812 |
| Molecularweight | 92.14 g/mol |
| Purity | 99% min |
| Grade | Semiconductor Grade |
| Appearance | Clear colorless liquid |
| Boilingpoint | 110.6°C at 760 mmHg |
| Meltingpoint | -95°C |
| Flashpoint | 4.4°C closed cup |
| Density | 0.865 g/mL at 20°C |
| Refractiveindex | 1.496 at 20°C |
| Solubilityinwater | 0.53 g/L at 20°C |
| Vapordensity | 3.14 (air=1) |
| Vaporpressure | 22 mmHg at 20°C |
| Autoignitiontemperature | 480°C |
As an accredited Toluene, Semiconductor Grade, 99% min, Thermo Scientific (Alfa Aesar) factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 1 L amber glass bottle with PTFE-lined cap, sealed to maintain semiconductor-grade purity and shelf stability. |
| Container Loading (20′ FCL) | 20′ FCL shipment of semiconductor-grade toluene (99% min) in securely packed, UN-approved drums, ensuring safe, compliant transport. |
| Shipping | Toluene, Semiconductor Grade (99% min, Thermo Scientific/Alfa Aesar) is a flammable, toxic liquid shipped in tightly sealed containers, typically glass or metal, under ambient conditions. Transport requires UN-approved packaging, hazard labeling (Class 3), and compliance with IATA/IMDG/ADR regulations. Avoid heat, sparks, and static discharge during transit. |
| Storage | Store in a tightly sealed, original container to preserve semiconductor-grade purity. Keep in a cool, dry, well-ventilated area, away from heat, sparks, open flames, oxidizers, and strong acids. Use explosion-proof equipment and ground/bond containers to prevent static buildup. Ensure proper labeling and segregate from incompatible materials. |
| Shelf Life | Shelf life is typically 2-3 years when stored tightly sealed in a cool, dry, dark area under inert gas. |
Toluene, Semiconductor Grade, 99% min, as supplied by Thermo Scientific (Alfa Aesar) is deployed in optical lithography tracks as an edge-bead removal agent and resist-solvent conditioner where trace-metal control is bounded by SEMI C1 for electronic-grade reagents and verified by capillary gas chromatography according to ASTM D6526. In this application the liquid is dispensed undiluted through point-of-use PTFE/PFA filters with 0.05 µm retention to remove coalesced particulate matter before contact with the wafer bevel; for resist-thinning programmes, the formulation addition ratio is typically maintained between 5 wt% and 15 wt% relative to the resist solution and is adjusted against a target kinematic viscosity measured by capillary viscometry at 25 °C, rather than by fixed gravimetric addition alone. The downstream production process is integrated into a coater/developer track housed in an ISO 14644-1 Class 5 cleanroom, where the solvent stream is delivered by a digital dispense pump, directed to the backside and bevel region of a rotating wafer at spin speeds between 600 rpm and 3,000 rpm, and evacuated through the exhaust bowl to reduce solvent redeposition. Terminal product types are patterned semiconductor wafers at the lithography stage, before etch or ion-implant operations, with the solvent function being the controlled removal of resist from the wafer edge and thinning of the resist film to achieve dimensional uniformity.
Organic thin-film transistors (OTFTs) are fabricated from solution-processable semiconductors such as triisopropylsilylethynyl pentacene and polymer-dielectric formulations in which semiconductor-grade toluene functions as the primary carrier solvent because high-purity aromatic character is compatible with hydrophobic side-chain chemistry and because certified low water content reduces active-layer aggregate formation. Compliance in this downstream track is governed by IEC 62321-3-1:2013 for restricted substances in final flexible-electronics assemblies, RoHS 2011/65/EU, and SEMI C1 trace-metal limits, with solvent purity verified by ASTM D6526 and water content typically specified below 500 ppm. Formulation addition ratios depend on deposition mode: inkjet-compatible semiconductor inks are prepared at 0.5–2 wt% solids in toluene, gravure and flexographic inks operate between 3 wt% and 6 wt% solids, and polymer gate-dielectric formulations are commonly diluted to 4–10 wt% solids. The production process includes shear-mixing under inert atmosphere, filtration through 0.45 µm or 0.22 µm polytetrafluoroethylene membranes, and transfer to a drop-on-demand printhead with a solvent-compatible piezo actuator; printed films are dried on a heated platen at 60–80 °C and annealed under nitrogen at 100–150 °C. The terminal product types include OTFT backplane arrays for e-paper and flexible sensor circuits, where residual solvent is driven below detection limits before encapsulation to avoid threshold-voltage drift.
Semiconductor-grade toluene is also used as a liquid-delivery solvent for metal-organic chemical vapour deposition precursors in the fabrication of ruthenium-containing thin films for copper interconnect liners, where the solvent must exhibit low water content to avoid premature hydrolysis of the organometallic compound inside the delivery line. In direct liquid injection systems, the precursor solution is commonly formulated at a molarity between 0.05 M and 0.2 M in toluene, filtered through 0.1 µm PTFE capsules, and metered by syringe or diaphragm pumps at flow rates from 0.1 mL/min to 1.0 mL/min into a vaporizer maintained at 100–180 °C. The downstream process includes flash vaporization, preheated carrier-gas transport through a showerhead, and thermal decomposition on a heated wafer chuck at 250–400 °C, with solvent-derived exhaust exhausted through a heated foreline to prevent condensation and line blockage. Compliance is anchored to SEMI C1 and ASTM D850 for distillation range, while published data for specific precursor formulations remains limited and tool-specific qualification is required before insertion into production. Terminal product types include copper barrier/liner stacks, DRAM capacitor electrodes, and through-silicon via metallization, where residual carbon from solvent-derived ligand decomposition is controlled by in-situ plasma treatment or post-deposition annealing.
Replacement of chlorinated solvents in component cleaning has driven adoption of high-purity aromatic solvent formulations containing semiconductor-grade toluene at 99% min for removal of vacuum grease, fluoropolymer residues, and organic process films from stainless-steel, quartz, and anodized aluminium parts prior to reinstallation in plasma etch, deposition, and ion-implant tools. The fluid is required to satisfy SEMI C1 limits for metallic impurities and is assessed for distillation range according to ASTM D850, while cleaning operations are carried out in ISO 14644-1 Class 6 or better environments with segregated solvent handling and local exhaust. Addition ratio in this application is 100 vol% for the sump, with no dilution recommended in the vapour-phase cleaning unit; immersion contact time at 40–60 °C ranges from 10 min to 30 min, followed by a vapour rinse zone and nitrogen blow-down at 0.2–0.5 MPa using dry-filtered gas. Ultrasonic transducers operating at 40 kHz are used to improve removal of sub-micrometre particulates from blind apertures in showerheads and electrode assemblies; after drying, non-volatile residue is verified below 0.1 µg/cm² by surface extraction. Terminal products are cleaned and re-qualified process-chamber parts, where the acceptance criterion is absence of particle shedding and metallic contamination above the chamber baseline before reinstallation and leak-up rate testing.
Quantum dot electroluminescent layers are processed from toluene-based dispersions because the solvent selectively solvates the aliphatic ligand shell of Cd-free ZnSe, InP, or perovskite quantum dots, enabling the low-viscosity, low-spreading formulations required for uniform spin-coating on patterned indium tin oxide substrates. Semiconductor-grade toluene with 99% min purity is specified to meet SEMI C1 for trace-metal control and IEC 62321 for restricted-substance compliance in final display modules under RoHS 2011/65/EU. Formulation addition ratios are commonly fixed at 1–20 mg/mL quantum dot solids in toluene, with viscosity adjusted by addition of a high-boiling co-solvent at 5–30 vol% to stabilize the film during the initial solvent-evaporation stage. The downstream process includes ligand exchange or solid–liquid separation under vacuum, syringe filtration through 0.22 µm nylon membranes, and spin-coating on a programmable coater at 1,500–4,000 rpm, followed by annealing at 80–120 °C on a hot plate to remove residual solvent. Published data for specific InP core-shell systems is limited; device-grade formulations are qualified through photoluminescence quantum yield and particle-size retention experiments rather than batch-level gravimetric methods only. Terminal product types include quantum-dot light-emitting diode display pixels, quantum-dot colour-conversion films, and photodetector absorber layers, where solvent purity directly affects dark current stability and operational lifetime.
In wafer-level packaging and redistribution-layer dielectric formation, semiconductor-grade toluene is introduced as a low-metal cosolvent in organic-soluble polyimide precursor varnish to control evaporation rate and film levelling on 200 mm and 300 mm wafers, especially where single-polar-aprotic-solvent mixtures produce edge-thickness variation and coating striations. The material complies with SEMI C1 cation limits and is analysed by ASTM D6526 for aromatic impurities; the final cured film is evaluated for outgassing according to ASTM E595-15 to support hermeticity requirements in subsequent moulding and underfill processes. The addition ratio in the varnish is typically 10–30 wt% of the total solvent mass, with the remaining solvent consisting of a polar aprotic cosolvent; adjustments are made by measuring dynamic viscosity using a cone-and-plate viscometer at 25 °C until a target between 1,200 mPa·s and 3,500 mPa·s is achieved. The coating process uses spin coating at 1,000–2,000 rpm, vacuum degassing, soft bake on a hot plate at 90–110 °C, and thermal imidization in a nitrogen-purge oven ramped from room temperature to 250–350 °C at 5 °C/min. The terminal product type is a passivated wafer with polyimide dielectric film from 2 µm to 10 µm thickness, used for bumping, bond-pad stress relief, and redistribution-layer insulation.
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Toluene, Semiconductor Grade, 99% min, Thermo Scientific (Alfa Aesar) is a controlled-purity aromatic hydrocarbon supplied for front-end semiconductor cleaning, coating-equipment maintenance, and selective solvent support. The product is identified by CAS Registry Number 108-88-3, empirical formula C₇H₈, and relative molecular mass 92.14 g/mol. The semiconductor-grade designation is the product model: it specifies a minimum assay of 99% and adds acceptance limits for water, nonvolatile residue, trace metal cations, and submicron particulate contamination that are not present in standard reagent-grade toluene. Alfa Aesar assigns item-specific catalog numbers by fill volume; common packaging configurations include 1 L, 2.5 L, and 4 L amber glass bottles with fluoropolymer-lined closures, but the lot-specific certificate of analysis remains the controlling specification.
ACS reagent-grade toluene is specified primarily for assay, distillation range, color, residue after evaporation, and sulfur-related darkening under concentrated sulfuric acid. HPLC-grade toluene adds low UV absorbance and lower water content for chromatographic baseline stability. Semiconductor-grade material is different in that its acceptance protocol extends to trace metal quantification by inductively coupled plasma mass spectrometry, submicron particle burden, and packaging under a nitrogen headspace. The difference is operational rather than solely compositional: a solvent that meets ACS assay and water limits can still deposit nonvolatile residue or metal cations on wafer surfaces if it has not been filtered and packaged for cleanroom transfer. The relevant analytical package includes ASTM D6526 for capillary GC assay, ASTM E1064 for coulometric Karl Fischer water, ASTM D1353 for nonvolatile residue, ASTM D4052 for density, and ASTM D1209 for color.
In a production-scale dispensing suite, the material is transferred from bulk containers through stainless-steel or PTFE distribution lines under positive nitrogen pressure. Point-of-use filtration at 0.05 µm or 0.1 µm is common, and particle counters calibrated to ISO 21501-1 are placed upstream of the dispense nozzle. Published data for this specific packaging configuration is limited; therefore, film-wafer particle validation should be performed before qualifying a new point-of-use filter. Toluene vapor pressure at 20 °C is approximately 2.9 kPa, and the closed-cup flash point is approximately 4 °C, so transfer hardware is electrically grounded and interlocked with local exhaust ventilation.
| Property | Typical semiconductor-grade acceptance window | Analytical method |
|---|---|---|
| Assay as C₇H₈ | ≥ 99.0 % | ASTM D6526 GC-FID |
| Water | ≤ 100 µg/g | ASTM E1064 coulometric Karl Fischer |
| Nonvolatile residue | ≤ 5 µg/g | ASTM D1353 at 110 °C |
| Color | ≤ 10 APHA | ASTM D1209 |
| Density at 20 °C | 0.865–0.867 g/mL | ASTM D4052 |
| Particle count at ≥ 0.5 µm | ≤ 100 particles/mL | Laser light-obscuration, ISO 21501-1 calibration |
The table values are illustrative acceptance windows reported for controlled-purity aromatic solvents and are not lot-specific guarantees. The manufacturer’s certificate of analysis gives the actual lot values and should be compared against the fab’s internal process control limits before release.
Trace metal contamination in semiconductor solvents is controlled because sodium, potassium, iron, copper, and zinc can adsorb on oxide surfaces, diffuse during thermal processing, and alter device electrical parameters. For this product, lot acceptance records typically report individual metal concentrations at low nanogram-per-gram levels by ICP-MS after closed-vessel acid digestion. The analytical method is not a substitute for wafer-level testing; fab users commonly measure surface metals by vapor phase decomposition ICP-MS or total reflection X-ray fluorescence after coating or cleaning tests. Particle burden is controlled by membrane filtration and validated by laser light-obscuration counters calibrated to ISO 21501-1. Supplier data sheets for controlled-purity aromatic solvents frequently list ≤ 100 particles/mL at ≥ 0.5 µm; however, the exact limit for this SKU should be obtained from the certificate of analysis.
For equipment cleaning, aromatic solvency allows removal of partially cured resist residues from spin-coater bowls, drain lines, and dispense nozzles. The cleaning efficiency depends on contact time, temperature, and mechanical agitation. In high-throughput coating tracks, bowl cleaning cycles are programmed between wafer intervals; solvent temperature is maintained below 25 °C to reduce vapor accumulation. Because toluene swells many polymers, wetted components should be limited to PTFE, high-density polyethylene, or stainless steel; EPDM and nitrile seals may extract plasticizers and raise residue levels.
| Grade | Key controlled attributes | Typical use | Limitation relevant to semiconductor processing |
|---|---|---|---|
| ACS reagent-grade toluene | Assay, color, nonvolatile residue | General chemical synthesis | Not filtered or controlled for trace metals at semiconductor levels |
| HPLC-grade toluene | Low UV absorbance, low water | Chromatographic mobile phase | Not controlled for particle shedding or sub-100 ng/g metal contamination |
| Semiconductor-grade toluene | Trace metals, moisture, residue, particle count, packaging atmosphere | Wafer edge-bead removal, coating-equipment cleaning, solvent support | Requires inert handling and cleanroom dispensing to maintain specification |
Edge-bead removal uses a solvent stream directed at the wafer periphery to dissolve excess photoresist before subsequent processing. Toluene can be used as a diluent or cleaner in such systems, but its evaporation rate and aromatic character change the edge-bead profile relative to PGMEA or cyclopentanone. Toluene has a Hansen solubility parameter hydrogen-bonding component near 2.0 MPa0.5, which is lower than the polar contribution of PGMEA; this difference can increase resist dissolution but also promote solvent penetration into masked features. The process window should be verified by top-down CD-SEM after pilot runs of at least 25 wafers, and backside wafer defect maps should be compared with the existing solvent.
Flammability limits require simultaneous evaluation. Toluene exhibits a lower flammable limit of approximately 1.2 vol% and an upper flammable limit of approximately 7.1 vol%; the autoignition temperature is approximately 480 °C. Therefore, coater enclosures should be equipped with flammable-gas detection interlocked to shut off solvent dispense, and the dispense system should be designed to prevent electrostatic discharge. Point-of-use filtration membranes must be selected from PTFE or ultrahigh-molecular-weight polyethylene; nylon filters can release residual oligomers or adsorb aromatic solvent components.
Substitution from PGMEA to toluene in edge-bead removal should include a cleaning efficacy test using a partially cured resist film on silicon coupons. Coupons are exposed to the solvent for 30 s, 60 s, and 120 s at 22 °C, followed by spin-rinse and optical inspection. Contact angles should be measured with goniometric equipment; a shift greater than 5° after cleaning indicates incomplete residue removal or surface modification. Published data for this specific configuration is limited, so these figures are best treated as starting points for fab qualification rather than vendor guarantees.
Water content is measured by coulometric Karl Fischer titration because the product is intended for moisture-sensitive environments where free water can cause defects or interfere with silylation reactions. The analytical sample is introduced by syringe through a septum to avoid atmospheric moisture contamination. Nonvolatile residue is determined gravimetrically after evaporation of a known mass at 110 °C in a platinum dish, following ASTM D1353. Distillation behavior is assessed with a narrow interval around 110.6 °C; the boiling point of the toluene-water heterogeneous azeotrope is 84.1 °C, which is used in some drying operations where toluene removes water as an azeotrope.
Packaging under nitrogen is a critical part of the product definition. Amber glass bottles reduce photolytic side reactions, and fluoropolymer-lined closures limit adhesive extractables. However, repeated sampling from a single bottle can increase headspace moisture and particle ingress; fab users typically specify single-use aliquots or install nitrogen-blanketed liquid withdrawal systems. Prior to first use, containers should be grounded and equilibrated to cleanroom temperature. When the solvent is used as a carrier for organosilicon precursors or as a rinse after alkaline cleaning, residual water and metal burdens are the dominant specification drivers. Sodium and potassium levels above 100 ng/g can create mobile ion contamination in oxide films; calcium and zinc can affect etch selectivity. For this reason, the semiconductor-grade product is typically supplied with per-lot ICP-MS data for at least sodium, potassium, iron, copper, zinc, calcium, and aluminum. Users running vapor phase decomposition ICP-MS on test wafers should compare extracted surface concentrations against the fab’s internal control limits; the solvent certificate alone does not guarantee compatibility with all wafer stacks.
Storage and compatibility constraints complete the product profile. Toluene is incompatible with strong oxidizing acids, peroxides, and open ignition sources; storage is specified below 25 °C under nitrogen in grounded cabinets. When the solvent is transferred into smaller cleanroom containers, the receiving vessel should be cleaned to semiconductor residue limits and flushed with filtered nitrogen. The empty container retains flammable vapor and should not be punctured or heated. These constraints define the operational boundary for semiconductor-grade toluene in front-end manufacturing, coating-equipment maintenance, and solvent support applications.
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